Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation
Identifieur interne : 00E031 ( Main/Repository ); précédent : 00E030; suivant : 00E032Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation
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Abstract
We report the application of pump-probe second harmonic generation (SHG) to monitor spin dynamics in nonmagnetic semiconductor heterostructures. Spin-polarized electrons were selectively excited by a pump beam in the GaAs layer of GaAs/GaSb/InAs structures. However, the induced magnetization manifests itself through the SHG probe signal from the GaSb/InAs interface, thus indicating a spin-polarized electron transport. We find that the magnetization dynamics is governed by an interplay between the spin density evolution at the interfaces and the spin relaxation. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation</title><author><name sortKey="Glinka, Yu D" uniqKey="Glinka Y">Yu. D. Glinka</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Shahbazyan, T V" uniqKey="Shahbazyan T">T. V. Shahbazyan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Perakis, I E" uniqKey="Perakis I">I. E. Perakis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Tolk, N H" uniqKey="Tolk N">N. H. Tolk</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Tennessee</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Vanderbilt University, Nashville</wicri:cityArea></affiliation></author><author><name sortKey="Liu, X" uniqKey="Liu X">X. Liu</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Department of Physics, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation></author><author><name sortKey="Sasaki, Y" uniqKey="Sasaki Y">Y. Sasaki</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Department of Physics, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation></author><author><name sortKey="Furdyna, J K" uniqKey="Furdyna J">J. K. Furdyna</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Department of Physics, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0381393</idno><date when="2002-07-08">2002-07-08</date><idno type="stanalyst">PASCAL 02-0381393 AIP</idno><idno type="RBID">Pascal:02-0381393</idno><idno type="wicri:Area/Main/Corpus">00EF27</idno><idno type="wicri:Area/Main/Repository">00E031</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron spin polarization</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface magnetism</term><term>Magnetization</term><term>Optical harmonic generation</term><term>Optical pumping</term><term>Semiconductor heterojunctions</term><term>Spin dynamics</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7570C</term><term>7225D</term><term>7361E</term><term>7866F</term><term>8105E</term><term>7340K</term><term>4265K</term><term>7560E</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Hétérojonction semiconducteur</term><term>Génération harmonique optique</term><term>Dynamique spin</term><term>Polarisation spin électronique</term><term>Pompage optique</term><term>Aimantation</term><term>Magnétisme interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the application of pump-probe second harmonic generation (SHG) to monitor spin dynamics in nonmagnetic semiconductor heterostructures. Spin-polarized electrons were selectively excited by a pump beam in the GaAs layer of GaAs/GaSb/InAs structures. However, the induced magnetization manifests itself through the SHG probe signal from the GaSb/InAs interface, thus indicating a spin-polarized electron transport. We find that the magnetization dynamics is governed by an interplay between the spin density evolution at the interfaces and the spin relaxation. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation</s1></fA08><fA11 i1="01" i2="1"><s1>GLINKA (Yu. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHAHBAZYAN (T. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>PERAKIS (I. E.)</s1></fA11><fA11 i1="04" i2="1"><s1>TOLK (N. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>LIU (X.)</s1></fA11><fA11 i1="06" i2="1"><s1>SASAKI (Y.)</s1></fA11><fA11 i1="07" i2="1"><s1>FURDYNA (J. K.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>220-222</s1></fA20><fA21><s1>2002-07-08</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. 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